GaN-based LEDs are generally fabricated on sapphire substrates due to the quality and cost, and the GaN-based LEDs can be separated from the sapphire substrate by laser lift off process. Therefore, we have investigated a laser lift off process to transfer GaN-based LEDs onto a flexible PET substrate. GaN-based LEDs bonded on the PET substrate can be separated from the sapphire substrate by laser lift off process. After transferring LEDs onto flexible substrate, the LEDs are operated successfully. This result shows that proposed transferring method can be used to fabricate flexible GaN-based LEDs.
Nanowire FETs are suitable for the understanding of the electronic transport mechanisms with surface interface roughness, size and shape of the ZnO nanowire. In addition, to date, hybrid solar cells incorporated with nanowire array structure have the advantages with efficient light-harvesting and direct electrical pathways for electron-hole pairs. We focused on the field of field effect transistors and solar cells.
The hybrid materials promise good properties by combining the advantages of both materials such as high flexibility of polymers with the structural, chemical, and high functional stability of inorganic materials. In addition, ZnO can be easily synthesized to one-dimensional nanostructures by using CVD and hydrothermal methods. The ZnO (nanostructures)/organic hybrid structures may lead to various applications in optoelectronic devices such as LEDs, solar cells, and flexible electronics.