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Nanophotonic Semin Conductors Lab.

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Formation of GaAs quantum dots by low-temperature droplet epitaxy,
  • AuthorC. D. Lee, C. Park, H. J. Lee, S. J. Park, K. S. Lee, C. G. Park, S. K. Noh
  • YearPrevious
  • Source3rd Int. Symp. on Advanced Physical Fields, Japan.

Electroluminescence emission from hybrid light-emitting diodes of p-ZnO/(InGaN/GaN) multiquantum wells/n-GaN
  • AuthorYong-Seok Choi, Tae-Young Park, Sang-Mook Kim, Gun-Young Jung, Seong-Ju Park
  • Year2011
  • SourceSPIE Optics+Photonics2011, San Dieg(USA), Aug 21-25 2011.

Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition
  • AuthorSang Jun Lee, Sang-Heon Han, Chu-Young Cho, Hyun-Wook Shim, Yong-Chun Kim, Seong-Ju Park
  • Year2011
  • SourceSPIE Optics+Photonics2011, San Dieg(USA), Aug 21-25 2011.

Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells
  • AuthorSang-Heon Han, Dong-Yul Lee, Hyun-Wook Shim, Gwon-Chul Kim, Young Sun Kim, Sung-Tae Kim, Sang-Jun Lee, Chu-Young Cho, Seong-Ju Park
  • Year2011
  • Source9th International Conference on Nitride Semiconductors(ICNS), Glasgow(Scotland), Jul 10-15 2011.

Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes
  • AuthorSang-Heon Han, Chu-Young Cho, Sang-Jun Lee, Tae-Young Park, Tae-Hun Kim, Je Won Kim, Yong Chun Kim, Seong-Ju Park
  • Year2011
  • Source9th International Conference on Nitride Semiconductors(ICNS), Glasgow(Scotland), Jul 10-15 2011.

Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition
  • AuthorSang-Jun Lee, Chu-Young Cho, Sang-Heon Han, and Seong-Ju Park
  • Year2011
  • Source9th International Conference on Nitride Semiconductors(ICNS), Glasgow(Scotland), Jul 10-15 2011.

Enhanced optical output power of near-ultraviolet light-emitting diodes by localized surface plasmons of silver nanoparticles
  • AuthorSang-Hyun Hong, Chu-Young Cho, Sang-Jun Lee, Yong-Seok Choi, Jae-Joon Kim, Seong-Ju Park
  • Year2011
  • Source9th International Conference on Nitride Semiconductors(ICNS), Glasgow(Scotland), Jul 10-15 2011.

Improved performance of GaN-based light-emitting diodes with high quality GaN grown on InN islands
  • AuthorSang-Jun Lee, Chu-Young Cho, Sang-Hyun Hong, Sang-Heon Han, Sukho Yoon, Sung-Tae Kim, Seong-Ju Park
  • Year2011
  • Source9th International Conference on Nitride Semiconductors(ICNS), Glasgow(Scotland), Jul 10-15 2011.

Growth and separation of high quality GaN epilayer from sapphire substrate by lateral epitaxial overgrowth and wet chemical etching
  • AuthorChu-Young Cho, Sang-Jun Lee, Sang-Hyun Hong, Seong-Eun Park, Sung-Tae Kim, Seong-Ju Park
  • Year2011
  • Source9th International Conference on Nitride Semiconductors(ICNS), Glasgow(Scotland), Jul 10-15 2011.

Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles
  • AuthorChu-Young Cho, Sang-Jun Lee, Jung-Hoon Song, Sang-Hyun Hong, Song-Mae Lee, Yong-Hoon Cho, Seong-Ju Park
  • Year2011
  • Source9th International Conference on Nitride Semiconductors(ICNS), Glasgow(Scotland), Jul 10-15 2011.
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