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Nanophotonic Semin Conductors Lab.

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Fabrication of self-assembled quantum dots in lattice-matched GaAs/AlGaAs system,
  • AuthorC. D. Lee, H. J. Lee, S. K. Noh, C. Park, C. G. Park, S. J. Park, and K. S. Lee
  • Year1998
  • SourceJ. Korean Phys. Soc., 33, pp. s262-s265, 1998.

Site selectivity in the initial oxidation of the Si(111)-7x7 surface,
  • AuthorJ. S. Ha, K. H. Park, E. H. Lee, and S. J. Park
  • Year1998
  • SourceAppl. Surf.Sci., 126, pp. 317-322, 1998.

Interaction of low-energy nitrogen ions with Si(111)-7x7 surface: STM and LEED investigations
  • AuthorJ. S. Ha, K. H. Park, W. S. Yun, E. H. Lee, and S. J. Park
  • Year1998
  • SourceAppl. Phys. A, 66, pp. s495-s499, 1998.

First-principles study of the As-mediated growths of Si and Ge on Si(100),
  • AuthorY. J. Ko, K. J. Chang, J. Y. Yi, S. J. Park, and E. H. Lee
  • Year1998
  • SourceSurf. Rev. Lett., 5(1), pp. 77-80, 1998.

Synchrotron radiation photoemission spectroscopy studies of the thermal nitridation of GaAs(100) with ammonia,
  • AuthorC. Huh, S. J. Park, S. Ahn, J. Y. Han, M. J. Cho, and J. M. Seo
  • Year1998
  • SourceJ. Vac. Sci. Technol. B, 16(1), pp. 192-196, 1998.

Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy,
  • AuthorC. D. Lee, C. Park, H. J. Lee, K. S. Lee, S. J. Park, C. G. Park, S. K. Noh, N. Koguchi
  • Year1998
  • SourceJpn. J. Appl. Phys., 37(Pt. 1, No. 12B), pp.7158-7160, 1998.

Ohmic contacts to p-type GaN using Ni/Pt/Au metallization scheme,
  • AuthorJ. S. Jang, H. G. Kim, S. J. Park, K. H. Park, and H. K. Jang
  • Year1998
  • SourceJ. Vac. Sci. Technol. B, 16(6), pp. 3105-3107, 1998.

Formation of GaAs quantum dots by low-temperature droplet epitaxy,
  • AuthorC. D. Lee, C. Park, H. J. Lee, S. J. Park, K. S. Lee, C. G. Park, and S. K. Noh
  • Year1998
  • SourceJ. Surf. Anal., 4(2), pp. 299-302, 1998.

Fabrication of self-assembled InGaAs, GaAs, and InAs quantum dots by chemical beam epitaxy,
  • AuthorJ. R. Ro, S. B. Kim, E. H. Lee, S. J. Park
  • Year1998
  • SourceMicroelectron. Eng., 43, pp.11-18, 1998.
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