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Nanophotonic Semin Conductors Lab.

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Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD,
  • AuthorJ. Kim, Y. T. Moon, K. M. Song, I. H. Lee, S. J. Park
  • Year2001
  • SourceJ. Electron. Mater., 30(2), pp. 99-102, 2001.

Dry etching of ZnO using an inductively coupled plasma,
  • AuthorM. Lee, K. M. Chang, K. K. Kim, S. J. Park
  • Year2001
  • SourceJ. Electrochem. Soc., 148(1), pp. G1-G3, 2001.

Effects of a two-step rapid thermal annealing process on Mg-doped p-type GaN films grown by metalorganic chemical vapor deposition
  • AuthorK. S. Ahn, D. J. Kim, Y. T. Moon, H. G. Kim, S. J. Park
  • Year2001
  • SourceJ. Vac. Sci. Technol. B, 19(1), pp. 215-218, 2001.

Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN,
  • AuthorS Jang, D-J Kim, S-J Park, and T-Y Seong
  • Year2001
  • SourceJ. Electron. Mater., 30(2), pp. 94-98, 2001.

Effect of an oxidized Ni/Au p-contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes,
  • AuthorKim, D. J. Kim, S. J. Park, and H. Hwang
  • Year2001
  • SourceJ. Appl. Phys., 89(2), pp. 1506-1508, 2001.

Effects of current spreading on the performance of GaN-based light emitting diodes,
  • AuthorKim, S. J. Park, and H. Hwang
  • Year2001
  • SourceIEEE Trans. Electron Devices, 48 (6), pp. 1065-1069, 2001.

Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,
  • AuthorM. Park, C. J. Choi, T. Y. Seong, S. J. Park
  • Year2001
  • SourcePhys. Rev. Lett., 86(7), pp. 1355-1357, 2001.

Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple quantum well blue light-emitting diodes,
  • AuthorHuh, S. W. Kim, H. S. Kim, H. M. Kim, H. Hwang, S. J. Park
  • Year2001
  • SourceAppl. Phys. Lett., 78(12), pp. 1766-1768, 2001.

Effect of alcohol-based sulfur treatment on Pt ohmic contact to p-type GaN ,
  • AuthorHuh, S. W. Kim, H. M. Kim, D. J. Kim, S. J. Park
  • Year2001
  • SourceAppl. Phys. Lett., 78(13), pp. 1942-1944, 2001.

Thermally oxidized GaN film for use as gate insulators,
  • AuthorKim, S. J. Park, H. Hwang
  • Year2001
  • SourceJ. Vac. Sci. Technol. B, 19(2), pp. 579-581, 2001.
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