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Nanophotonic Semin Conductors Lab.

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The surface treatment with NH3 for GaN grown by a sublimation technique
  • AuthorH. J. Lee, J. J. Lee, Y. J. Park, S. K. Min, J. H. Lyou and S. J. Park
  • Year2002
  • SourceJ. Korean Phys. Soc., 41(4), pp. 479-482, 2002.

Photoluminescence and photocurrent studies of p-type GaN with various thermal treatments
  • AuthorS. J. Chung, E.-K. Suh, H. J. Lee, H. B. Mao, and S. J. Park
  • Year2002
  • SourceJ. Cryst. Growth, 235, pp. 49-54, 2002.

Low resistance and thermally stable Pb/Ru Ohmic contacts to p-type GaN
  • AuthorJ-S Jang, S. J. Park and T-Y Seong
  • Year2002
  • SourceJ. Electron. Mater., 31(9), pp. 903-906, 2002

Effects of sulfur passivation on Ti/Au ohmic contacts to n-type GaN using CH3CSNH2 solution
  • AuthorJ. O. Song, S. J. Park, and T-Y Seong
  • Year2002
  • SourceAppl. Phys. Lett., 80(17), pp. 3129-3131, 2002.

Thermally stable and low resistance Ru ohmic contacts to n-ZnO
  • AuthorH-K Kim, K-K Kim, S. J. park, T-Y Seong, and Y-S Yoon
  • Year2002
  • SourceJpn. J. Appl. Phys., 41(Pt.2, No. 5B), pp. L546-L548

Electron charging and discharging in amorphous silicon quantum dots xss-embedded in silicon nitride
  • AuthorN. M. Park, S. H. Choi, and S. J. Park
  • Year2002
  • SourceAppl. Phys. Lett., 81(6), pp. 1092-1094, 2002.

Improvement in light-output efficiency of InGaN/GaN multiple-quantum well lighting emitting diode by current blocking layer
  • AuthorC. Huh, J. M. Lee, D. J. Kim, and S. J. Park
  • Year2002
  • SourceJ. Appl. Phys., 92(5), pp. 2248-2250, 2002.

Lateral current transport path, a model for GaN-based Light-emitting diodes: applications to pratical device designs
  • AuthorH. Kim, S. J. Park, H. Hwang, N. M. Park
  • Year2002
  • SourceAppl. Phys. Lett., 81(7), pp. 1326-1328, 2002.

Design and fabrication of highly efficient GaN-based lighting-emitting diodes
  • AuthorH. Kim, S. J. Park, and H. Hwang
  • Year2002
  • SourceIEEE Trans. Electron Devices, 48(10), pp. 1715-1722, 2002.

Growth and size control of amorphous silicon qunatum dots using an SiH4/N2 plasma
  • AuthorN. M. Park, S. H. Kim, G. Y. Sung, and S. J. Park
  • Year2002
  • SourceChem. Vapor Depos., 8(6), pp. 254-256, 2002.
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