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Nanophotonic Semin Conductors Lab.

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Single-crystal zincblende GaN grown on GaP(100) substrate by molecular beam epitaxy
  • AuthorM. H. Kim, F. S. Juang, Y. G. Hong, C. W. Tu, S. J. Park
  • Year2003
  • SourceJ. Cryst. Growth, 251, pp. 465-470, 2003.

Effect of KrF(248nm) excimer laser irradiation on electrical and optical properties of GaN:Mg
  • AuthorD. J. Kim, H. M. Kim, M. G. Han, Y. T. Moon, S. Lee, S. J. Park
  • Year2003
  • SourceJ. Vac. Sci. Technol. B, 21(2), pp. 641-644, 2003.

Growth-temperature dependent property of GaN barrier layer and its effect on InGaN/GaN multiple quantum well light-emitting diodes
  • AuthorY. T. Moon, H. H. Lee, D. Y. Noh and S. J. Park
  • Year2003
  • SourceJ. Korean Phys. Soc., 42(4), pp. 557-561, 2003.

Effects of transparent Pt metal layer on performance of InGaN/GaN multiple-quantum well light-emitting diodes
  • AuthorC. Huh, W. Schaff, L. Eastman, S. J. Park
  • Year2003
  • SourceElectrochem. Solid State Lett., 6(6), pp. G79-G81, 2003.

Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of p-GaN surface
  • AuthorC. Huh, K. S. Lee, E. J. Kang, S. J. Park
  • Year2003
  • SourceJ. Appl. Phys., 93(11), pp. 9383-9385, 2003.

Charging effects in amorphous silicon quantum dots embedded in silicon nitride
  • AuthorN. M. Park, S. H. Kim, G. Y. Sung, S. H. Choi, S. J. Park
  • Year2003
  • SourceJ. Korean Phys. Soc., 42, pp. S361-S366, 2003.

Dry-etch damage and its recovery in InGaN/GaN multi-quantum-wells light-emitting diodes
  • AuthorJ. M. Lee, C. Huh, S. J. Park
  • Year2003
  • SourceSemicon. Sci. and Tech., 18, pp. 530-534, 2003 .

Effects of pressure and NH3 flow on two-dimensional electron mobility in AlGaN/GaN heterostructures
  • AuthorD. J. Kim, Y. T. Moon, M. S. YI, D. Y. Noh, S. J. Park
  • Year2003
  • SourceJ. Kor. Phys. Soc., 42(5), pp. 691-695, 2003.

High rate dry etching of ZnO using BCl3/CH4/H2 plasmas,
  • Author. W. Bae, C. H. Jeong, H. K. Kim, T. Y. Seong, K. K. Kim, S. J. Park, I. Adesida, and G. Y. Yoem
  • Year2003
  • SourceJpn. J. Appl. Phys., 42(Pt. 2, No. 5B), pp. L535-L537, 2003.

Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN,
  • Author. O. Song, K. K. Kim, S. J. Park, and T. Y. Seong
  • Year2003
  • SourceAppl. Phys. Lett., 83(3), pp. 479-481, 2003.
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