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Nanophotonic Semin Conductors Lab.

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Inductively-coupled-plasma reactive ion etching of ZnO using BCl3-based plasmas and effect of the Plasma treatment on Ti/Au ohmic contacts to ZnO
  • AuthorH. K. Kim, J. W. Bae, K. K. Kim, S. J. Park, T. Y. Seong, and I. Adesida
  • Year2004
  • SourceThin Solid Films, 447, pp. 90-94, 2004.

Temperature dependence of performance of InGaN/GaN MQW LEDs with differenct In compositions
  • AuthorC. Huh, W. J. Schaff, L. F. Eastman, S. J. Park
  • Year2004
  • SourceIEEE Electron Device Lett., 25(2), pp. 61-63, 2004.

Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer
  • AuthorH. K. Kim, T. Y. Seong, K. K. Kim, S. J. Park, Y. S. Yoon, and I. Adesida
  • Year2004
  • SourceJpn. J. Appl. Phys., 43(3), pp. 976-979, 2004.

Study of the electrical and structural characteristitics of Al/Pt ohmic contacts on n-Type ZnO epitaxial layer
  • AuthorH. K. Kim, K. K. Kim, S. J. Park, I. Adesida, and T. Y. Seong
  • Year2004
  • SourceJ. Electrochem. Soc., 151(4), pp. G223-G226, 2004.

Removal of dry etch damage in p-type GaN by wet etching of sacrificial oxide layer
  • AuthorJ. M. Lee, K. S. Lee, S. J. Park
  • Year2004
  • SourceJ. Vac. Sci. Technol. B, 22(2), pp. 479-482, 2004.

Recovery of dry-etch induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing
  • AuthorY. T. Moon, D. J. Kim, J. S. Park, J. T. Oh, J. M. Lee, S. J. Park
  • Year2004
  • SourceJ. Vac. Sci. Technol. B, 22(2), pp. 489-491, 2004.

Growth of buffer-free high quality ZnO epilayer on sapphire (0001) using radio-frequency magnetron sputtering
  • AuthorJ. Y. Oh, J. H. Lim, D. K. Hwang, H. S. Kim, R. Navamathavan, K. K. Kim and S. J. Park
  • Year2004
  • SourceJ. Electrochem. Soc., 151(9), pp. G623-G626, 2004.

Fabrication of ZnO quantum dots embedded in an amorphous oxide layer
  • AuthorK. K. Kim, N. Koguchi, Y. W. Ok, T. Y. Seong, and S. J. Park
  • Year2004
  • SourceAppl. Phys. Lett., 84(19), pp. 3810-3812, 2004.

Suppression of leakage current in InGaN/GaN multiple-quantum well LEDs by N2O plasma treatment
  • AuthorH. M. Kim, C. Huh, S. W. Kim, N. M. Park, and S. J. Park
  • Year2004
  • SourceElectrochem. Solid State Lett., 7(11), pp. G241-G243, 2004.

Effects of temperature on InGaN/GaN LEDs with different MQW structures
  • AuthorC. Huh and S. J. Park
  • Year2004
  • SourceElectrochem. Solid State Lett., 7(11), pp. G266-G268, 2004
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