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Introduce
Members
Professor
Students
Ph.D.
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Research
GaN team
Research
Linck
ZnO team
Research
Linck
Flex-Dev team
Research
Linck
Publication
Journal papers
SCI
Non-SCI
Presenations
International conference
Book
Total number of citaion
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2091
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2093
2094
2095
2097
2100
2101
2102
2103
2104
2105
2107
2108
2109
2110
2111
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2114
2115
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2005
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논문명(출판명)
저자
출처
Low Resistance and High Reflectance Pt/Rh Contacts to p-type GaN for GaN-Based Flip Chip Light-Emitting Diodes
Author
J. R. Lee, S. I. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park
Year
2005
Source
J. Electrochem. Soc., 152(1), pp. G92-G94, 2005.
Electrical and Optical Characteristics of InGaN/GaN Microdisk LEDs
Author
K. S. Lee, C. Huh, J. M. Lee, E. J. Kang, and S. J. Park
Year
2005
Source
Electrochem. Solid State Lett., 8(3), pp. G68-G70, 2005.
Formation and effect of thermal annealing for low resistance Ni/Au ohmic contact to phosphorous doped p-type ZnO
Author
J. H. Lim, K. K. Kim, D. K. Hwang, H. S. Kim, J. Y. Oh, and S. J. Park
Year
2005
Source
J. Electrochem. Soc., 152(3), pp. G179-G181, 2005.
Effect of interlayers on the indium oxide doped ZnO ohmic contact to p-type GaN
Author
J. H. Lim, D. K. Hwang, H. S. Kim, J. H. Yang, R. Navamathavan, and S. J. Park
Year
2005
Source
J. Electrochem. Soc., 152(6), pp. G491-G493, 2005.
Hydrogenation effect on the Er Luminescence in amorphous silicon quantum dot films
Author
N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, K. S. Cho, J. H. Shin, B. H. Kim, S. J. Park, J. K. Lee, and M. Nastasi
Year
2005
Source
Electrochem. and Solid-State Lett., 8(2), pp. G63-G64, 2005.
Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4
Author
B. H. Kim, C. H. Cho, T. W. Kim, N. M. Park, G. Y. Sung, and S. J. Park
Year
2005
Source
Appl. Phys. Lett., 86, 091908, 2005.
Thermally stable and lowresistance Re/Ti/Au ohmic contacts to n-ZnO
Author
S. H. Kim, K. K. Kim, S. J. Park, and T. Y. Seong
Year
2005
Source
J. Electrochem. Soc., 152(3), pp. G169-G172, 2005.
Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering
Author
D. K. Hwang, H. S. Kim, J. H. Lim, J. Y. Oh, J. H. Yang, K. K. Kim, R. Navamathavan, and S. J. Park
Year
2005
Source
Appl. Phys. Lett., 86, 151917, 2005.
Effect of hydrogen passivation on charge storage in silicon quantum dots xss-embedded in silicon nitride film
Author
C. H. Cho, B. H. Kim, T. W. Kim, N. M. Park, G. Y. Sung, and S. J. Park
Year
2005
Source
Appl. Phys. Lett., 86, 143107, 2005.
Si delta-doping in GaN barrier layer of InGaN/GaN multiquantum well for an efficient ultraviolet light-emitting diode
Author
M. K. Kwon, I. K. Park, S. H. Baek, J. Y. Kim, and Seong-Ju Park
Year
2005
Source
J. Appl. Phys., 97, 106109, 2005.
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