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Nanophotonic Semin Conductors Lab.

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Persistent n-type photoconductivity in p-type ZnO
  • AuthorB. Claflin, D. C. Look, S. J. Park, and G. Cantwell
  • Year2006
  • SourceJ. Cryst. Growth, 287, pp. 16-22, 2006.

The effect of Ar/O2 sputtering gas on the phosphorus-doped p-type ZnO thin films
  • AuthorJ. H. Yang, H. S. Kim, J. H. Lim, D. K. Hwang, J. Y. Oh, and S. J. Park
  • Year2006
  • SourceJ. Electrochem. Soc., 153(3), pp. G242-G244, 2006.

Improvement of a green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature
  • AuthorM. S. Oh, M. K. Kwon, I. L. Park, S. H. Baek, and S. J. Park
  • Year2006
  • SourceJ. Cryst. Growth, 289, pp. 107-112, 2006.

A nanoindentation study of the mechanical properties of ZnO thin films on (0001) sapphire
  • AuthorR. Navamathavan, K. K. Kim, D. K. Hwang, S. J. Park, T. G. Lee, G. S. Kim, J. H. Hahn
  • Year2006
  • SourceAppl. Surf. Sci., 253, pp. 464-467, 2006.

'Pop-in' phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates
  • AuthorR. Navamathavan, Y. T. Moon, G. S. Kim, T. G. Lee, J. H. Hahn, and S. J. Park
  • Year2006
  • SourceMater. Chem. Phys., 99, pp. 410-413, 2006.

Thin film transistors based on ZnO fabricated by using radio frequency magnetron sputtering
  • AuthorR. Navamathavan, J. H. Lim, D. K. Hwang, B. H. Kim, J. Y. Oh, J. H. Yang, J. H. Jang, H. S. Kim, J. H. Jang, and S. J. Park
  • Year2006
  • SourceJ. Korean Phys. Soc., 48(2), pp. 271-274, 2006.

Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes
  • AuthorJ. Y. Kim, S. I. Na, G. Y. Ha, M. K. Kwon, I. K. Park, J. H. Lim, and S. J. Park, M. H. Kim, D. Choi, K. Min
  • Year2006
  • SourceAppl. Phys. Lett., 88, 043507, 2006.

Effects of electrical bias stress on the performance of ZnO based TFTs fabricated by RF magnetron sputtering
  • AuthorR. Navamathavan, J. H. Lim, E. J. Yang, D. K. Hwang, J. Y. Oh, J. H. Yang, J. H. Jang, and S. J. Park
  • Year2006
  • SourceJ. Electrochem. Soc., 153(5), pp. G385-G388, 2006.

Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3
  • AuthorT. W. Kim, C. H. Cho, B. H. Kim, and S. J. Park
  • Year2006
  • SourceAppl. Phys. Lett., 88, 123102, 2006.

Enhanced carrier confinement in AlInGaN/InGaN quantum wells in near ultraviolet light-emitting diodes
  • AuthorS. H. Baek, J. O. Kim, M. K. Kwon, I. K. Park, S. I. Na, J. Y. Kim, B. Kim, and S. J. Park
  • Year2006
  • SourceIEEE Photonic Tech. Lett., 18(11), pp. 1276-1278, 2006.
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