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Introduce
Members
Professor
Students
Ph.D.
Alumni
Research
GaN team
Research
Linck
ZnO team
Research
Linck
Flex-Dev team
Research
Linck
Publication
Journal papers
SCI
Non-SCI
Presenations
International conference
Book
Total number of citaion
Citation number of paper
H-index
Lecture
Community
News
Notice
gallery
2091
2092
2093
2094
2095
2097
2100
2101
2102
2103
2104
2105
2107
2108
2109
2110
2111
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2113
2114
2115
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2008
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Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition
Author
J. S. Park, Y. T. Moon, D. J. Kim, N. M Park, T. Yao, and S. J. Park
Year
2008
Source
J. Phys. D: Appl. Phys., 41, 165103, 2008.
Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering
Author
R. Navamathavan, C. K. Choi, E. J. Yang, J. H. Lim, D. K. Hwang, and S. J. Park
Year
2008
Source
Solid State Electron., 52, 813-816, 2008.
Effect of hydrogen dilution on intrinsic a-Si:H layer between emitter and Si wafer in silicon heterojunction solar cell
Author
S. K. Kim, J. C. Lee, S. J. Park, Y. J. Kim, and K. H. Yoon
Year
2008
Source
Sol. Energy Mater. Sol. Cells., 92, pp. 298-301, 2008.
Modified electrode architecture for efficient and air-stable polymer solar cells based on P3HT:PCBM
Author
S. I. Na, S. S. Kim, J. Jo, K. S. Lee, S. J. Park and D. Y. Kim
Year
2008
Source
J. Photochem. Photobiol. A-Chem., 53, pp.2560-2566, 2008.
Surface plasmon-enhanced light-emitting diode
Author
M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park
Year
2008
Source
Adv. Mater. 20, pp. 1253-1257, 2008.
Effect of N2O plasma treatment on the performance of ZnO TFT
Author
K. Remashan, D. K. Hwang, S. D. Park, J. W. Bae, G. Y. Yeom and S. J. Park
Year
2008
Source
Electrochem. and Solid-State Lett. 11, pp. H55-H59, 2008.
Effects of surface roughness on the electrical characteristics of ZnO nanowire field effect transistors
Author
W. K. Hong, S. H. Song, D. K. Hwang, S. S. Kwon, G. H. Jo, S. J. Park, and T. H. Lee
Year
2008
Source
Appl. Surf. Sci. 254, 7559, 2008.
Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells
Author
I. K. Park, J. Y. Kim, M. K. Kwon, C. Y. Cho, J. H. Lim, and S. J. Park
Year
2008
Source
Appl. Phys. Lett., 92, 091110, 2008.
Tunable electronic transport characteristics of surface architecture-controlled ZnO nanowire field effect transistors
Author
W. K. Hong, J. I. Sohn, D. K. Hwang, S. S. Kwon, G. Jo, S. Song, S. M. Kim, H. J. Ko, S. J. Park, M. Welland, and T. Lee
Year
2008
Source
Nano Lett., 8(3), PP. 950-956, 2008.
Enhanced of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons
Author
B. H. Kim, C. H. Cho, J. S. Mun, M. K. Kwon, T. Y. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. J. Park
Year
2008
Source
Adv. Mater. 20(16), pp. 3100-3104, 2008.
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