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Nanophotonic Semin Conductors Lab.

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Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure
  • AuthorK. Remashan, Y. S. Choi, S. J. Park, and J. H. Jang
  • Year2011
  • SourceJpn. J. Appl. Phys., 50, 04DJ08, 2011.

Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles
  • AuthorC. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park
  • Year2011
  • SourceAppl. Phys. Lett., 98, 051106, 2011.

Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition
  • AuthorS. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park
  • Year2011
  • SourceJ. Phys. D: Appl. Phys., 44, 105101, 2011.

Arrays of silicon micro/nanostructures formed in suspended configurations for deterministic assembly using flat and roller-type stamps
  • AuthorY. Yang, Y. Hwang, H. A. Cho, J. H. Song, S. J. Park J. A. Rogers and H. C. Ko
  • Year2011
  • SourceSmall, 7(4), pp. 484-491, 2011.

Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation
  • AuthorI. K. Park and S. J. Park
  • Year2011
  • SourceAppl. Phys. Express, 4, 042102, 2011.

Optical properties and electronic subband structures in InxGa1-xN/GaN multiple quantum wells
  • AuthorD. U. Lee, J. T. Ryu, T. W. Kim, M. H. Jeon, K. H. Yoo, C. Y. Cho, and S. J. Park,
  • Year2011
  • SourceThin Solid Films, 519, pp. 5122-5125, 2011.

Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask
  • AuthorC. G. Kang, J. W. Kang, S. K. Lee, S. Y. Lee, C. H. Cho, H. J. Hwang, Y. G. Lee, J. Heo, H. J. Chung, H. Yang, S. Seo, S. J. Park, K. Y. Ko, J. Ahn, and B. H. Lee
  • Year2011
  • SourceNanotechnology, 22, 295201, 2011.

Electroluminescence emission from light-emitting diode of p-ZnO/(InGaN/GaN) multiquantum well/n-GaN
  • AuthorT. Y. Park, Y. S. Choi, S. M. Kim, G. Y. Jung, S. J. Park, B. J. Kwon, and Y. H. Cho
  • Year2011
  • SourceAppl. Phys. Lett., 98, 251111, 2011.

High-efficiency light-emitting diode with air voids xss-embedded in lateral epitaxially overgrown GaN using a metal mask
  • AuthorC. Y. Cho, M. K. Kwon, I. K. Park, S. H. Hong, J. J. Kim, S. E. Park, S. T. Kim, and S. J. Park
  • Year2011
  • SourceOpt. Express, 19(S4), pp. A943-948, 2011.

Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks xss-embedded in p-GaN
  • AuthorC. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. Ko, S. T. Kim, G. Y. Jung, and S. J. Park
  • Year2011
  • SourceAppl. Phys. Lett., 99, 041107, 2011.
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