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Nanophotonic Semin Conductors Lab.

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A self-assembled Ag nanoparticle agglomeration process on graphene for enhanced light output in GaN-based LEDs
  • AuthorJ. P. Shim, D. H. Kim, M. H. Choe, T. H. Lee, S. J. Park, and D. S. Lee
  • Year2012
  • SourceNanotechnology, 23, 255201, 2012.

Printable ultrathin substrates formed on a concave-convex underlayer for highly flexible membrane-type electrode stickers
  • AuthorY. Hwang, H. A. Cho, S. H. Kim, H. S. Jang, Y. Hyun, J. Chun, S. J. Park, and H. C. Ko
  • Year2012
  • SourceSoft Matter, 8, pp. 7598-7603, 2012.

Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
  • AuthorM. Choe, C. Y. Cho, J. P. Shim, W. Park, S. K. Lim, W. K. Hong, B. H. Lee, D. S. Lee, S. J. Park, and T. H. Lee
  • Year2012
  • SourceAppl. Phys. Lett. 101, 031115, 2012.

A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells
  • AuthorI. K. Park, M. K. Kwon, and S. J. Park
  • Year2012
  • SourceJ. Korean. Phys. Soc., 60(10), pp. 1666-1670, 2012.

Impact of near-stoichiometric silicon nitride gate insulator on the performance of MOCVD-grown ZnO thin-film transistors
  • AuthorK. Ramashan, Y. S. Choi, S. J. Park, and J. H. Jang
  • Year2012
  • SourceECS J. Solid State Sci. Technol., 1(4), pp. Q70-Q78, 2012.

Enhanced blue emission from InGaN quantum wells by surface plasmon in multi-walled carbon nanotubes
  • AuthorC.Y. Cho, S. J. Lee, S. H. Hong, J. J. Kim, W. Lim, S. T. Kim, and S. J. Park
  • Year2012
  • SourceECS J. Solid State Sci. Technol., 1(5), pp. R140-R142, 2012.

Enhanced optical power of InGaN/GaN light-emitting diode by AlGaN interlayer and electron blocking layer
  • AuthorS. J. Lee, C. Y. Cho, S. H. Hong, S. H. Han, S. Yoon, S. T. Kim, and S. J. Park
  • Year2012
  • SourceIEEE Photonics Technol. Lett., 24(22), pp. 1991-1994, 2012.

Effect of internal electric field in well layer of InGaN/GaN multiple quantum well light-emitting diodes on efficiency droop
  • AuthorS. H. Han, D. Y. Lee, J. Y. Lim, J. W. Lee, D. J. Kim, Y. S. Kim, S. T. Kim, and S. J. Park
  • Year2012
  • SourceJpn. J. Appl. Phys., 51, 100201, 2012.

Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing
  • AuthorJ. Chun, Y. Hwang, Y. S. Choi, T. Jeong, J. H. Baek, H. C. Ko, and S. J. Park
  • Year2012
  • SourceIEEE Photonics Technol. Lett., 24(23), pp. 2115-2118, 2012.

Formation of a low-resistance and high reflectivity reflector on p-type GaN with a AgAl ohmic contact
  • AuthorJ. Y. Kim, S. J. Park, and M. K. Kwon
  • Year2012
  • SourceJ. Korean. Phys. Soc., 60(10), pp. 1749-1752, 2012.
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