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Nanophotonic Semin Conductors Lab.

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Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode
  • AuthorJ. W. Kang, Y. S. Choi, B. H. Kim, C. G. Kang, B. H. Lee, C. W. Tu, and S. J. Park
  • Year2014
  • SourceAppl. Phys. Lett., 104, pp. 051120, 2014.

Laser lift-off transfer printing of patterned GaN light-emitting diodes from sapphire to flexible substrates using a Cr/Au laser blocking layer
  • AuthorJ. Chun, Y. Hwang, Y. S. Choi, J. J. Kim, T. Jeong, J. H. Baek, H. C. Ko, and S. J. Park
  • Year2014
  • SourceScr. Mater., 77, pp. 13-16, 2014.

Enhanced internal quantum efficiency and light extraction efficiency of light-emitting diodes with air-gap photonic crystal structure formed by tungsten nano-mask
  • AuthorC. Y. Cho, S. H. Hong, K. S. Kim, G. Y. Jung, and S. J. Park
  • Year2014
  • SourceBull. Kor. Chem. Soc., 35, 3, 2014.

High-Performance Photoconductivity and Electrical Transport of ZnO/ZnS Core/Shell Nanowires for Multifunctional Nanodevice Applications
  • AuthorS. Jeong, M. Choe, J. W. Kang, M. W. Kim, W. G. Jung, Y. C. Leem, J. Chun, B. J. Kim, and S. J. Park
  • Year2014
  • SourceACS Appl. Mater. Interfaces, 6, 6170-6176, 2014.

Structural and electrical properties of phosphorous-doped p-type ZnSxO1-x film grown by co-sputtering
  • AuthorJ. W. Kang, Y. S. Choi, B. H. Kim, N. Y. Kim, C. W. Tu, and S. J. Park
  • Year2014
  • SourceScr. Mater., 84-85, pp. 39-42, 2014.

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers
  • AuthorK J. Lee, S. J. Kim, J. J. Kim, K. Hwang S. T. Kim, and S. J. Park
  • Year2014
  • SourceOpt. Express, 22(S4), A1164-A1173, 2014.

Fabrication of glass-free photoelectrodes for dye-sensitized solar cells (DSSCs) by transfer method using ZnO nanorods sacrificial layer
  • AuthorH. Song, H. H. Jeong, J. H. Song, S. W. Shin, J. Chun, S. J. Park, Y. S. Won, and G. Y. Jung
  • Year2014
  • SourceMater. Lett., 132, pp.27-30, 2014.

Enhancement of Optical Output Power of Light-Emitting Diodes with Photonic Crystals in InGaN/GaN Multiple Quantum Wells by Sulfide Passivation
  • AuthorY. C. Leem, H. M. Lee, Y. S. Park, S. Y. Yim, H. Jeong, G. Y. Jeong and S. J. Park
  • Year2014
  • SourceECS J. Solid State Sci. Technol., 3(8), pp. Q153-Q156, 2014.

Enhanced Optical Output Power of InGaN/GaN verticcal light-emitting diodes by ZnO nanorods on plasma-treated N-face GaN
  • AuthorY. C. Leem, N. Y. Kim, W. Lim, S. T. Kim and S. J. Park
  • Year2014
  • SourceNanoscale, 6(17), pp.10187-10192, 2014.

Vertically Stacked Color Tunable Light-Emitting Diodes Fabricated Using Wafer Bonding and Transfer Printing
  • AuthorJ. Chun, K J Lee, Y. C. Leem, W. M. Kang, T. Jeong, J. H. Baek, H. J. Lee, B. J. Kim and S. J. Park
  • Year2014
  • SourceACS Appl. Mater. Interfaces, 6, 19482-19487, 2014.
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